4.3 Article

Photosensing circuit using thin-film transistors for retinal prosthesis

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 57, Issue 10, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.7567/JJAP.57.1002B1

Keywords

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Funding

  1. KAKENHI [20656059]
  2. research project of the Joint Research Center for Science and Technology of Ryukoku University
  3. High-Tech Research Center Program for private universities from the Ministry of Education, Culture, Sports, Science and Technology (MEXT)
  4. MEXT
  5. Faculty of Science and Technology of Ryukoku University

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A photosensing circuit using thin-film transistors (TFTs) for a retinal prosthesis has been developed. First, the TFTs that are low-temperature polycrystalline silicon (poly-Si) TFTs are fabricated on a transparent substrate, which enables us to build an epiretinal implantation system without using any extracorporeal cameras. Then, the photosensing circuit is fabricated by connecting a p/i/n-type phototransistor and a ring oscillator, which provides stimulating current pulses with an oscillation frequency dependent on light illuminance. In particular, the device structure of the p/i/n-type phototransistor is designed well on the basis of device physics, and the configuration of the photosensing circuit on the basis of device characteristics. Subsequently, a wireless power transfer system is architected by magnetic resonance coupling. Finally, a retinal prosthesis is produced by assembling the photosensing circuit and wireless power transfer system, and the stimulating performance is confirmed in an in vitro experiment, which suggests a future possibility of this retinal prosthesis. (C) 2018 The Japan Society of Applied Physics

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