4.3 Review

Review of solution-processed oxide thin-film transistors

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 2, Pages -

Publisher

IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.02BA02

Keywords

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Funding

  1. National Research Foundation of Korea (NRF)
  2. Korean Ministry of Education, Science and Technology (MEST) [2011-0028819]
  3. National Research Foundation of Korea [2011-0028819] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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In this review, we summarize solution-processed oxide thin-film transistors (TFTs) researches based on our fulfillments. We describe the fundamental studies of precursor composition effects at the beginning in order to figure out the role of each component in oxide semiconductors, and then present low temperature process for the adoption of flexible devices. Moreover, channel engineering for high performance and reliability of solution-processed oxide TFTs and various coating methods: spin-coating, inkjet printing, and gravure printing are also presented. The last topic of this review is an overview of multi-functional solution-processed oxide TFTs for various applications such as photodetector, biosensor, and memory. (C) 2014 The Japan Society of Applied Physics

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