Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 9, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.09PA04
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Funding
- MEXT Elements Strategy Initiative to Form Core Research Center
- JSPS KAKENHI [12F02766, 25889024, 26106509]
- JSPS [P12766]
- Austrian Science Fund (FWF) [P12766] Funding Source: Austrian Science Fund (FWF)
- Grants-in-Aid for Scientific Research [26106509, 25889024, 12F02766] Funding Source: KAKEN
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The effect of the heat treatment conditions on the constituent phases and electrical properties of (Hf(0.5)Z(0.5))O-2 films deposited by the metalorganic chemical vapor deposition was investigated. By using a low temperature or short duration for post-heat treatment after the deposition, the volume fraction of the tetragonal phase increases, resulting in a high dielectric constant. On the other hand, the volume fraction of the monoclinic phase increased in the films that were heat-treated at higher temperatures and exposed to longer heat treatment duration. The ferroelectric with and dielectric properties of these films were greatly inferior. Superior ferroelectric properties a significant volume fraction of orthorhombic phase were achieved for intermediate heat treatment conditions. These results give useful information to understand the origin of the ferroelectricity and to control the phases and electrical properties in HfO2-based films. (C) 2014 The Japan Society of Applied Physics
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