Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.038002
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- Grants-in-Aid for Scientific Research [24560063] Funding Source: KAKEN
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We propose a method to obtain the pressure-distance product (pd) for thermalization in the sputtering process using a Monte Carlo (MC) simulation. Sputter-ejected atoms proceed forward with high energy, and fall into random motion finally. That is, after many MC trials the average position of atoms reaches saturation. The thermalization distance d can be estimated from this saturation position. We could obtain the pd product for Al, Cu, and Mo in argon atmosphere. The pd values agreed well with the pressure dependence of the deposition profile observed experimentally. (C) 2014 The Japan Society of Applied Physics
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