Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.080303
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- New Energy and Industrial Technology Development Organization (NEDO) under the Ministry of Economy, Trade and Industry of Japan
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We have shown the effectiveness of polarized photoluminescence imaging for analyzing the structural and spectroscopic properties of small-angle grain boundaries (SA-GBs) in multicrystalline Si. The dislocation-related deep-level emission band at approximately 0.79 eV at room temperature was found to be polarized, whereas the band-edge emission did not show the polarization effect. The anisotropy of the 0.79 eV band was classified into two groups depending on the tilt and twist characteristics of SA-GBs determined by the electron backscatter diffraction measurement. (C) 2014 The Japan Society of Applied Physics
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