Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.032101
Keywords
-
Categories
Funding
- Center for Advanced Soft Electronics under the Global Frontier Research Program of the Ministry of Education, Science and Technology, Korea [20110031640]
- National Research Foundation of Korea [NRF-2013R1A1A1A05007934]
Ask authors/readers for more resources
Red-light-emitting diodes (LEDs) were fabricated using CdSe/CdZnS quantum dots (QDs). During the device fabrication process, the oxygen plasma treatment of the indium tin oxide (ITO) surface was performed to improve the interfacial contact between the ITO anode and the hole injection layer. The device showed red emission at 622 nm, which was consistent with the dimensions of the QDs (band gap: 1.99 eV). The luminance was 108.77 cd/m(2) and the current density was 230.2 mA/cm(2) at an operating voltage of 7 V, when the oxygen plasma treatment was performed on the ITO surface. The luminance showed 207% improvement compared with that of LEDs fabricated without oxygen plasma treatment. These results suggested that the oxygen plasma treatment of the ITO surface improved the contact between ITO and PEDOT:PSS, and that the light emitting intensity was markedly improved. (C) 2014 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available