Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 53, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.53.04EG02
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- Japanese Government - Ministry of Internal Affairs and Communications
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A semiconductor optical amplifier was fabricated by incorporating highly stacked InAs quantum dots (QDs) as a gain media. Twenty InAs QD layers were successfully stacked through the strain-compensation technique, without any deterioration of crystal quality. A wide-range 1.55 mu m band gain was observed, and maximum gain reached 25 dB at 1530nm when the input power was below -40 dBm. (C) 2014 The Japan Society of Applied Physics
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