Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.06GF02
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Funding
- Japan Society for the Promotion of Science [25289105]
- Grants-in-Aid for Scientific Research [25289105] Funding Source: KAKEN
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We developed a method to dope phosphorus into 4H-SiC by irradiating excimer laser light to 4H-SiC immersed in phosphoric acid solution. A KrF excimer laser was used. The surface is slightly ablated by the laser irradiation. However, no amorphous layer is generated near the surface. Phosphorous is introduced at a concentration of over 10(20) cm(-3) near the crystal surface. The laser irradiation in phosphoric acid solution significantly improves the ohmic contact characteristic between metal and 4H-SiC. Hall effect measurement shows that the irradiation produces an n-type layer at the surface whose sheet carrier concentration is 2.25 x 10(12) cm(-2). In addition, we produce a pn junction by irradiating p-type 4H-SiC. The pn junction shows a rectifying characteristic whose on/off ratio is over 8 decades and ideality factor is 1.06. (c) 2013 The Japan Society of Applied Physics
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