Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.08JC08
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Funding
- NSF MRSEC program [DMR 1121053]
- National Science Foundation (NSF)
- National Science Council in Taiwan [NSC-99-2221-E-002-058-MY3]
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We have demonstrated the InGaN/GaN single-quantum-well (SQW) red light-emitting diodes (LEDs) grown on the free-standing GaN (20 (2) over bar1) substrate with a forward voltage as low as 2.8 V at 20 mA. A low p-GaN growth temperature is required to prevent the structure deterioration during the p-GaN growth. The reduction of the forward voltage was observed as the emission wavelength increased in the (20 (2) over bar1) SQW LEDs, which is attributed to its reversed polarization-related electric field compared to the conventional c-plane LEDs. (C) 2013 The Japan Society of Applied Physics
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