Numerical study of Cu(In,Ga)Se2 solar cell performance toward 23% conversion efficiency

The effects of conduction band grading in a CO(In,Ga)Se-2 (CIGS) thin film with an average bandgap of 1.4 eV on solar cell performance were investigated by changing the minimum bandgap (E-gmin,) and its position, employing the software wxAMPS. The calculation was carried out, taking CdS/CIGS heterointerface recombination into account, by incorporating a thin defective layer into the interface. For CIGS with a flat conduction band profile, i.e., without conduction band grading, the effects of the valence band offset (Delta E-V) between a CdS layer and a CIGS layer with bandgaps from 1.05 to 1.6 eV were investigated. It was found that efficiency was increased by up to 3% by changing the conduction band profile from flat to double-graded, with a deep notch located in the vicinity of the CdS/CIGS interface. On the other hand, efficiency was increased by over 6% and reached 22% by increasing Delta E-V up to 0.3 eV in the case of CIGS with a bandgap of 1.35 eV. Finally, an efficiency of 23.4% was achieved by combining a single-graded conduction band profile with a Delta E-V of 0.3 eV. This result shows that a single-graded conduction band profile is required for high-efficiency wide-bandgap CIGS solar cells if the recombination at the CdS/CIGS heterointerface can be suppressed. (C) 2014 The Japan Society of Applied Physics