Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.08JH01
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Funding
- Regional Innovation Cluster Program (Global Type) Tokai Region Nanotechnology Manufacturing Cluster
- Ministry of Education, Culture, Sports, Science and Technology of Japan [23760281]
- Grants-in-Aid for Scientific Research [23760281] Funding Source: KAKEN
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Mg codoping into Eu-doped GaN (GaN:Eu) changed the dominant optical site and increased the photoluminescence (PL) intensity at room temperature (RT). From the ratio of PL integrated intensity at 25 K to that at 300 K, PL efficiency of the GaN: Eu, Mg layer was evaluated to be as high as 77%. On the basis of this experiment, GaN:Eu-based LEDs grown by NH3 MBE were fabricated. Clear rectification characteristics with a turn-on voltage of 3.2 V were observed and a pure red emission was observed by the naked eye at RT. For the electroluminescence (EL) spectra, two predominant peaks of higher-efficiency optical sites A and C were selectively enhanced and the EL intensity was improved. This result suggests that GaN: Eu was very effective for realizing red-light-emitting devices using the nitride semiconductor. (C) 2013 The Japan Society of Applied Physics
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