Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.063001
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Funding
- Asahi Glass Foundation
- JST
- Global COE Program Materials Integration, Tohoku University of the Ministry of Education, Culture, Sports, Science and Technology, Japan
- [22360002]
- [22226001]
- Grants-in-Aid for Scientific Research [22226001, 12J05553] Funding Source: KAKEN
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We investigated the crystal structures, electrical transport properties, and three-terminal (3T) Hanle signals of Co2FeAl0.5Si0.5 (CFAS)/n-GaAs Schottky tunnel junctions fabricated with different deposition temperature of the CFAS (T-CFAS). CFAS thin films were deposited on the n-GaAs at T-CFAS ranging from room temperature to 300 degrees C, and 3T-Hanle signals were observed for all CFAS/n-GaAs junctions. Although the degree of structural ordering in the CFAS electrodes decreased and the rectifying characteristic disappeared as T-CFAS decreased, the spin resistance area products (Delta RA) increased and the estimated spin relaxation time (tau) decreased monotonically with decreasing T-CFAS. Moreover, the bias voltage dependence of Delta RA and tau became larger and smaller with decreasing T-CFAS, respectively. (C) 2013 The Japan Society of Applied Physics
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