Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.08JN20
Keywords
-
Categories
Ask authors/readers for more resources
A semiconductor photoelectrochemical electrode that contains a heterostructure at the surface vicinity is attractive as a corrosion-tolerant electrode. In order to clarify its basic characteristics, the differences in Schottky junctions were evaluated using the semiconductor capacitance dependence on voltage. The Mott-Schottky relationship of a thin AlGaN layer on GaN was different from that of GaN bulk. The Schottky junctions were formed not only by using an electrolyte contact, but also by using a metal electrode to evaluate the effects of the semiconductor-electrolyte interface. Although diffusions of ions and solvents occur in the electrolyte, the Mott-Schottky plot measured for the electrolyte system showed a similar voltage dependence slope to that measured with a metal contact. This indicates that an electrolyte has a limited effect on the depletion behavior of the semiconductor heterojunction electrode. (c) 2013 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available