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JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.08JB14
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InGaN/AlGaN multi-quantum wells (MQWs) were grown by metalorganic vapor phase epitaxy. The In composition of the InGaN well layer was found to increase with the tensile strain of the AlGaN barrier layer. The InGaN/AlGaN strain-compensated structure can be grown at a higher growth temperature than that of the InGaN/GaN MQW, which shows that the same emission wavelength and thus the density of the V-defects can be effectively suppressed. (C) 2013 The Japan Society of Applied Physics
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