Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 52, Issue 8, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.7567/JJAP.52.084101
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Funding
- National Key Basic Research Program of China [2009CB930803, 2013CB921700]
- National Natural Science Foundation of China [10834012]
- Knowledge Innovation Project of the Chinese Academy of Sciences [KJCX2-YW-W24]
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Low-frequency current noise measurements were performed on ZnO-based photoconductive detectors, and 1/f noise characteristics were observed both in the dark and under ultraviolet illumination. The noise measured under illumination is approximately one order of magnitude higher than the dark noise. In the higher voltage range, a knee-like voltage dependence of the photocurrent noise was observed. The enhanced photocurrent noise is attributed to the random trapping-detrapping processes of the oxygen-related hole-trap states at the grain boundary interface. The anomalous voltage dependence of the photocurrent noise in the higher voltage range indicated the presence of the inhomogeneous distribution of the oxygen-related hole-trap states. (C) 2013 The Japan Society of Applied Physics
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