☆ 4.3 Article

Deep levels in n-GaN Doped with Carbon Studied by Deep Level and Minority Carrier Transient Spectroscopies

JAPANESE JOURNAL OF APPLIED PHYSICS (2013)

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS

Volume 51, Issue 4S, Pages 04DF04

Publisher

Japan Society of Applied Physics

DOI: 10.7567/jjap.51.04df04

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Categories

Physics, Applied

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