High-Performance Thin Film Transistor with Amorphous In2O3-SnO2-ZnO Channel Layer

We have developed a high-mobility and high-processability oxide semiconductor using amorphous In2O3-SnO2-ZnO (a-ITZO) as the channel material. An a-ITZO thin-film transistor (TFT) was fabricated by a back-channel-etch process. Its field effect mobility was more than 20 cm(2) V-1 s(-1) and its subthreshold swing was 0.4 Vs(-1), which makes it a promising candidate for next-generation TFTs. (C) 2012 The Japan Society of Applied Physics