Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 2, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.51.02BM01
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Funding
- Ministry of Education, Culture, Sports, Science and Technology of Japan [21360140, 22560001, 23246055, 19048001]
- Grants-in-Aid for Scientific Research [22560001, 21360140, 23246055] Funding Source: KAKEN
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The effect of MgO barrier insertion on a spin-valve signal in a four-terminal non-local geometry and on tunneling anisotropic magnetoresistance (TAMR) characteristics in a three-terminal geometry was investigated in Co50Fe50/n-GaAs heterojunctions. Inserting a MgO barrier significantly enhanced the spin-valve signal amplitude by a factor of 38, and the sign of spin polarization was opposite that of a sample without a MgO barrier. The TAMR effect was suppressed in the case of a Co50Fe50/MgO/n-GaAs junction. This suppression of the TAMR effect can be explained by the suppression of Fermi-level pinning and the lowering of Schottky barrier height. (C) 2012 The Japan Society of Applied Physics
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