4.3 Article

Influences of Gate Bias and Light Stresses on Device Characteristics of High-Energy Electron-Beam-Irradiated Indium Gallium Zinc Oxide Based Thin Film Transistors

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 51, Issue 9S2, Pages 09MF11

Publisher

Japan Society of Applied Physics
DOI: 10.7567/jjap.51.09mf11

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