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JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 50, Issue 12, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.50.128001
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A Cu2ZnSnS4 (CZTS) single crystal was grown at 900 degrees C, which is less than its melting point (962 degrees C) using a traveling heater method, which is one of the solution growth methods. No twins and no secondary phases could be distinguished from the Laue and X-ray diffraction patterns, respectively. (C) 2011 The Japan Society of Applied Physics
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