Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 5, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.49.05EB06
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Funding
- Ministry of Education, Science and Technology [R0A-2005-000-10011-0, 2009-0086302]
- Second Stage of the Brain Korea 21 Project
- National Research Foundation of Korea [2009-0086302] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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We investigated the influence of the thickness of printed Ga-In-Zn-O (GIZO) channel on transistor performance. Semiconductor layers were ink-jet printed using sol-gel derived GIZO solution and the thickness of the resulting active layers varied depending on the pre-heated substrate temperature. We found that GIZO film thickness significantly influences device performance. Thin film transistors (TFTs) with thicker active layers showed higher on-current/off-current mobility and a threshold voltage shift in the negative direction. The dependence of the electric characteristics on thickness resulted from the increased intrinsic free charge carriers as the active layer thickness increased. Ink-jet printing conditions need to be carefully controlled to maximize device performance. (C) 2010 The Japan Society of Applied Physics
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