Magnetoresistance of a Spin Metal-Oxide-Semiconductor Field-Effect Transistor with Ferromagnetic MnAs Source and Drain Contacts

Transport characteristics were investigated in a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET) with ferromagnetic MnAs source and drain (S/D) contacts. A bottom gate type spin MOSFET was fabricated by photolithography using an epitaxial MnAs film grown on a silicon-on-insulator (SOI) substrate. In plane magnetoresistance showed a square life hysteretic behaviour when measurements were performed with constant source-drain and source-gate biases. From the comparison with magnetization related resistance change resulting from the MnAs contacts a highly possible origin of the feature obtained for the spin MOSFET is the spin-value effect orginating from the spin dependent transport in the Si channel (C) 2010 The Japan Society of Applied Physics