Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 6, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.49.06GJ01
Keywords
-
Categories
Funding
- Strategic Information and Communications R&D Promotion Programme (SCOPE) of Japan
- Japan Society for the Promotion of Science
- Shinsei Foundation
- Hirosaki University
Ask authors/readers for more resources
Telecommunication-wavelength quantum dots (QDs) were successfully grown by metalorganic vapor phase epitaxy using a novel growth method in which trimethylbismuth (TMBi) was supplied during the growth. Supplying TMBi during the growth was confirmed to have a surfactant effect, but did not result in the formation of a bismuth-containing alloy. Using this growth method, the photoluminescence intensity and wavelength of the QDs were much improved. It was found that the QD size was increased during the growth of the InGaAs covering layer; this effect partly resembled activated alloy phase separation reported for molecular-beam-epitaxy-grown QDs. For the realization of high density and multilayer QDs, we confirmed that a much higher V/III ratio than that of usual growth conditions and a strain-compensation structure are effective, respectively. (C) 2010 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available