Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 4, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.49.04DH06
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- National Science Council of Taiwan [NSC 96-2221-E-009-202-MY3, NSC 97-2221-E-009-153, NSC 98-2221-E-009-003, NSC 96-2112-M-009-026-MY3]
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Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FXA) photoluminescence (PL) peak at 3.478 eV and the E-2 high phonon Raman shift of 567 cm(-1). It is clearly demonstrated that the critical diameter of GaN nano-rods is around 80nm for the overgrowth of strain-free GaN. The blue-shift of PL peak energy and phonon Raman energy with decreasing the diameter of nano-rod result from the strain relaxation of overgrowth GaN. (C) 2010 The Japan Society of Applied Physics
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