Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 49, Issue 3, Pages -Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.49.03CD02
Keywords
-
Categories
Funding
- Advanced Film Device Inc.
Ask authors/readers for more resources
We have newly developed a 4.0-in. quarter video graphics array (QVGA) active-matrix organic light-emitting diode (AMOLED) display integrated with gate and source driver circuits using amorphous In-Ga-Zn-oxide (IGZO) thin-film transistors (TFTs). Focusing on a passivation layer in an inverted staggered bottom gate structure, the threshold voltage of the TFTs can be controlled to have normally-off'' characteristics with suppressed variation by using a SiOx layer formed by sputtering with a low hydrogen content. In addition, small subthreshold swing S/S of 0.19 V/decade, high field-effect mobility mu(FE) of 11.5 cm(2) V-1 s(-1), and threshold voltage V-th of 1.27 V are achieved. The deposition conditions of the passivation layer and other processes are optimized, and variation in TFT characteristics is suppressed, whereby high-speed operation in gate and source driver circuits can be achieved. Using these driver circuits, the 4.0-in. QVGA AMOLED display integrated with driver circuits can be realized. (C) 2010 The Japan Society of Applied Physics
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available