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JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 48, Issue 1, Pages -Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.48.010203
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We discuss the ultraviolet (UV) photo-field effects in amorphous InGaZnO4 thin-film transistors (a-IGZO TFTs) compared with those in hydrogenated amorphous silicon (a-Si:H) TFTs. It is shown that the UV illumination induces a much more significant threshold voltage (VI) decrease and OFF-current increase for the a-IGZO TFTs; than for the a-Si:H TFTs. The significant V-t decrease is found to take several tens of min to return to the initial state after switching off the UV light. A qualitative model is introduced to explain the photoresponse unique to the a-IGZO TFTs. (C) 2009 The Japan Society of Applied Physics
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