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Resonant Tunneling diodes for sub-terahertz and terahertz oscillators

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 6, Pages 4375-4384

Publisher

IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.4375

Keywords

terahertz device; resonant tunneling diode; oscillator; slot antenna; voltage-controlled oscillator; coherent power combining

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Resonant tunneling diodes (RTDs) have the potential for use as compact and coherent terahertz (THz) sources operating at room temperature. In this paper, sub-THz and THz oscillators with RTDs integrated on planar circuits are described. Fundamental oscillation up to 0.65THz and harmonic oscillation up to 1.02THz were obtained at room temperature in our recent study. Limiting factors for oscillation frequency and output power are theoretically analyzed including tunneling and transit-time effects and parasitic elements. Oscillation frequency and its dependence on RTD size are in good agreement with the measured results. Based on this result, it is shown that fundamental oscillation up to 2.3THz and an output power of 60pW at I THz are theoretically expected by improving the structures of the RTD and the antenna. Voltage-controlled oscillation, which is useful for the precise control of frequency, is observed in the RTD oscillators. Coherent power combining in an array configuration to achieve high output power as well as mutual injection locking between the array elements are also described.

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