Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 11, Pages 8506-8509Publisher
JAPAN SOC APPLIED PHYSICS
DOI: 10.1143/JJAP.47.8506
Keywords
beta-Ga2O3; EFG; crystal growth; induction heating; X-ray analysis; EPDs
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The successful growth of 2-in, beta-Ga2O3 crystals by the edge-defined, film fed growth (EFG) method was demonstrated. The optimization of growth conditions for larger single crystalline beta-Ga2O3 is discussed in detail. The seeding conditions of temperature and neck width were found to be the most important factors to grow single crystals. X-ray rocking curve measurements of beta-Ga2O3 crystals were conducted to estimate the dislocation densities of the grown crystals. Etch pit densities (EPDs) of the beta-Ga2O3 crystals were also measured using KOH solution to measure the dislocation densities. The results were discussed combining with crystal growth parameters such as neck width to clarity the mechanisms of propagation and the origin of dislocations in crystals from phenomenological and crystallographic points of view. [DOI: 10.1143/JJAP.47.8506]
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