Improvement of metal-insulator-semiconductor-type organic light-emitting transistors

We developed metal-insulator-semiconductor-type organic light-emitting transistors (MIS-OLETs), and improved their properties by optimizing the device structure. MIS-OLETs showed a maximum drain current of I(D) = -149 mu A, maximum luminance of 1034 cd/m(2) (V(D) = -20 V, V(G) = -50 V) and on/off ratio of over 10(4). Moreover an active-matrix display using MIS-OLETs on a plastic substrate was fabricated. The developed 16 x 16 active-matrix-drive organic light-emitting transistors (AMOLET) showed excellent properties by optimizing device structure.