Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 8, Pages 6266-6271Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.6266
Keywords
ReRAM; resistance switching; memory effect; dielectric breakdown; reduction-oxidation; CuO
Categories
Funding
- Ministry of Education. Culture, Sports, Science and Technology, Japan [19104008]
- Japan Society for the Promotion of Science
- Grants-in-Aid for Scientific Research [19104008] Funding Source: KAKEN
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The resistance switching mechanism of a metal/CuO/metal sandwich with a planar device structure has been studied. We report the direct observation of a conducting bridge within the CuO channel of the device, which is formed upon the initial voltage application (forming process). It is found that the resistance switching phenomenon only occurs when just a single bridge is formed during a soft dielectric breakdown. We argue that the reduction and oxidation of this conducting bridge by the action of an applied field and/or current gives rise to a novel nonvolatile memory effect.
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