4.3 Article Proceedings Paper

Effect of ferroelectric/metal interface structure on polarization reversal

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 2, Pages 1259-1262

Publisher

IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.1259

Keywords

vinylidene fluoride oligomer; electrode/ferroelectric interface; D-E hysteresis curve; J-E curve; coercive field; switching current peak; fatigue; oxide layer

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The ferroelectric behaviors of vinylidene fluoride (VDF) oligomer thin films deposited on various bottom electrode materials (i.e., Au, Pt, Al, Al2O3/Al, and Al2O3/Au) were investigated. The coercive electric fields and full width at half maximum (FWHM) of the switching current peak of VDF oligomer thin films on the Au and Pt bottom electrodes were respectively lower and narrower than those of Al. These results indicate that the native oxide layer Al2O3 on the Al electrode surface works as a linear capacitor on ferroelectric capacitors. However, ferroelectric capacitors using Au and Pt bottom electrodes have the tendency to easily break down with the sudden application of an electric field. Their polarization switching and fatigue lifetime are affected by electrode material and the ferroelectric/metal interface.

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