Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 2, Pages 839-842Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.839
Keywords
MOCVD; InGaN/GaN MQWs; surface pit; photoluminescence; internal quantum efficiency
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Funding
- National Research Foundation of Korea [과C6B1912] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)
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A series of green emitting In1-xGaxN/GaN multi-quantum wells (MQWs) has been grown by using low pressure metal organic chemical vapor deposition. Effects of In flow prior to InGaN well growth for a short duration on structural and optical properties of the MQWs have been studied. In pre-flow does not affect the structural properties such as In composition and interface abruptness of the InGaN/GaN MQW structure. But, it red shifts the photoluminescence (PL) emission peak of MQWs with increase of In pre-flow duration. For specific emission energy, the surface pit density of MQWs grown with In pre-flow is significantly lower than that of MQWs grown without In pre-flow. In pre-flow samples show about 30% enhancement of PL internal quantum efficiency in deep green region (>530nm) compared to MQWs grown without In pre-flow.
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