Gd doping improved resistive switching characteristics of TiO2-based resistive memory devices

Binary nietal-oxide-based resistive memory devices generally show broad dispersions of resistive switching parameters with continuous resistive switching, and this leads to severe readout and control hazards. In this paper, we report improvements of the resistive switching characteristics in TiO2-based resistive memory devices induced by the Gd doping of TiO2 films. The effect of Gd doping on the resistive switching of TiO2-based resistive memory devices is discussed.