Synethesis of VO2 nanowire and observation of metal-insulator transition

We have fabricated crystalline nanowires of VO2 using vanadium metal deposition. A nanowire synthesized at 650 degrees C shows semiconducting behavior and a nanowire synthesized at 670 degrees C exhibits the first-order metal-insulator transition which is not the one-dimensional a property. The temperature coefficient of resistance in the semiconducting nanowire is 7.06%/K at 300 K, which is higher than that of a commercial bolometer.