4.3 Article

Single-Electron-Resolution Electrometer Based on Field-Effect Transistor

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 11, Pages 8305-8310

Publisher

IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.8305

Keywords

single electron; electrometer; high charge sensitivity; Si field-effect transistor

Funding

  1. Japan Society for the Promotion of Science [20241036, 19310093]
  2. Grants-in-Aid for Scientific Research [19310093] Funding Source: KAKEN

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An electrometer based oil field-effect transistors (FETs) wits fabricated oil a silicon-on-insulator substrate (SOI), The electrometer has a nanometer-scale small channel and a capacitively coupled node, where single electrons are stored. We discuss the dependence of the charge sensitivity of the electrometer on its structure and on its operation condition and gives guides for achieving the higher charge sensitivity. The device optimization based on this dependence allows the demonstration of the electrometer with extremely high charge sensitivity. 0.0013 e/root Hz at 1 Hz, at room temperature.

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