Journal
JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 7, Pages 5708-5711Publisher
IOP PUBLISHING LTD
DOI: 10.1143/JJAP.47.5708
Keywords
copper; chemical mechanical planarization (CMP); dishing; erosion; photoresist (PR)
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Funding
- Ministry of Science and Technology and the Korea Science and Engineering Foundation [R15-2006-022-01003-0]
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Modern industries require more accurate and high power-efficient micro-electro-mechanical systems (MEMS) and integrated circuits (ICs). Because the structure of MEMS and ICs becomes complicated, chemical mechanical planarization (CMP) has been introduced to fabricate highly integrated electro-mechanical structures. This study aims to reduce dishing and erosion using a negative photoresist (PR) as a protective layer in CMP for thick copper. After bulk copper CMP, soft-landing was carried out using an acidic copper CMP slurry. Method I was the CMP of a thick copper pattern without a negative PR, and method II was a new concept for the CMP method which removed the copper and negative PR to reduce the amount of copper dishing and erosion. In comparison with method I, method II reduced the dishing and erosion buy about 46 and 60%, respectively.
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