4.3 Article Proceedings Paper

High-spatial-resolution topographic imaging and dimer distance analysis of Si(100)-(2x1) using noncontact atomic force microscopy

Journal

JAPANESE JOURNAL OF APPLIED PHYSICS
Volume 47, Issue 7, Pages 6085-6087

Publisher

JAPAN SOCIETY APPLIED PHYSICS
DOI: 10.1143/JJAP.47.6085

Keywords

Si(100)-(2x1); atomic force microscopy; NC-AFM; frequency modulation; FM-AFM; dimer structure

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The distance between bright spot in a dimer on the Si(100)-(2x1) surface imaged by noncontact atomic force microscopy (NC-AFM) is analyzed. We used in the analysis only high-spatial-resolution topographic NC-AFM images obtained using different tips at room temperature. Atoms in the dimer was clearly resolved, which enabled us to analyze the distance between two bright spots in the dinner statistically. The average distance was similar to that obtained in a previous study and the theoretical predition. The results indicated that dimer flipping was induced by the AFM tip during scanning and upper-upper atoms are imaged at room temperature.

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