4.3 Article

Bending of Semiconducting Cantilevers Under Photothermal Excitation

Journal

INTERNATIONAL JOURNAL OF THERMOPHYSICS
Volume 35, Issue 2, Pages 305-319

Publisher

SPRINGER/PLENUM PUBLISHERS
DOI: 10.1007/s10765-014-1572-x

Keywords

Photothermal; Semiconducting cantilevers; Vibration

Funding

  1. National Natural Science Foundation of China [10972169, 11272243]
  2. Fundamental Research Funds for the Central Universities
  3. Scientific Research Program Funded by Shaanxi Provincial Education Department [13JS103]
  4. Ministry of Education Science and Technological Development of the Republic of Serbia [171016]

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In this study, the elastic vibrations of semiconducting cantilevers, which were excited with a frequency-modulated uniform laser beam, were studied theoretically and experimentally. The three-dimensional distributions for the carrier density and temperature were obtained analytically using the Green function method. The elastic bending of a cantilever was given by the theory of a thin rectangular plate. Using an optical interferometric setup, the experimental photothermal signals were investigated near the first resonant frequency and the results showed that the theoretical calculation results were in good agreement with that of the experimental measurement.

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