Journal
INTERNATIONAL JOURNAL OF THERMAL SCIENCES
Volume 86, Issue -, Pages 387-393Publisher
ELSEVIER FRANCE-EDITIONS SCIENTIFIQUES MEDICALES ELSEVIER
DOI: 10.1016/j.ijthermalsci.2014.07.018
Keywords
Single electron transistor; Thermoelectric figure of merit; Atomic approach
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Funding
- DINAIN (Colombia National University)
- DIB (Colombia National University)
- COLCIENCIAS (Colombia)
- Brazilian National Research Council CNPq
- International Centre for Theoretical Physics (ICTP)-Trieste
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We study the thermoelectric transport properties of a single electron transistor. We describe a two-level quantum dot, connected to right and left leads, employing the single impurity Anderson model with local finite electronic correlation. Using the linear response theory, we compute the thermoelectric transport coefficients. We calculate the thermoelectric properties employing the Green's functions calculated within the atomic approach, but for simplicity, we only consider the electronic contribution and neglect the phononic contribution to the thermal conductance. In the single electron transistor this is not so drastic, because the phononic contribution can be minimized, isolating the quantum dot from the electrodes with two tunneling barriers, whose material can be appropriately chosen to produce a low phononic contribution. We show that the best dimensionless thermoelectric figure of merit for the single electron transistor, occurs in the weak coupling regime, at temperatures well above the Rondo temperature. (C) 2014 Elsevier Masson SAS. All rights reserved.
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