Journal
INTERNATIONAL JOURNAL OF RF AND MICROWAVE COMPUTER-AIDED ENGINEERING
Volume 24, Issue 4, Pages 464-469Publisher
WILEY-BLACKWELL
DOI: 10.1002/mmce.20787
Keywords
cold-FET; parameter extraction; small-signal model; HEMT; pinch-off
Funding
- National Natural Science Foundation of China [61176036]
- Shanghai Minhang Excellent Talents
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An improved method to determine the small-signal equivalent circuit model for HEMTs is presented in this study, which is combination of the analytical approach and empirical optimization procedure. The parasitic inductances and resistances are extracted under pinch-off condition. The initial intrinsic elements are determined by conventional analytical method. Advanced design system (agilent commercial circuit simulator) is used to optimize the whole model parameters with small deviation of initial values. An excellent agreement between measured and simulated S-parameters is obtained for 2 x 20 mu m(2) gate width HEMT up to 40 GHz. (C) 2013 Wiley Periodicals, Inc.
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