Journal
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 215-218Publisher
ELSEVIER
DOI: 10.1016/j.mee.2015.04.041
Keywords
BaTiO3; Molecular beam epitaxy; Ferroelectric oxides; Pockels effect
Categories
Funding
- National Science Foundation [IRES-1358111]
- European Commission [FP7-ICT-2013-11-619456-SITOGA]
- Air Force Office of Scientific Research [FA9550-12-10494]
- Office Of The Director
- Office Of Internatl Science &Engineering [1358111] Funding Source: National Science Foundation
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High-quality epitaxial BaTiO3 (BTO) on Si has emerged as a highly promising material for future electrooptic (EO) devices based on BTO's large effective Pockels coefficient. We report on the EO response of BTO films deposited on Si by molecular beam epitaxy (MBE), and characterize the structure of these films by reflection high-energy electron diffraction and X-ray diffraction. O-2 rapid thermal anneal at 600 degrees C for 30 min ensures full oxidation of BTO for minimal leakage current with minimal change in crystalline structure. (C) 2015 Elsevier B.V. All rights reserved.
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