Journal
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 141-144Publisher
ELSEVIER
DOI: 10.1016/j.mee.2015.04.073
Keywords
Hydroxyl E ' center; SiO2 point defects; Device reliability; DFT; Positively charged E '
Categories
Funding
- EPSRC [EP/L000202]
- Office of Science and Technology through EPSRC's High End Computing Programme
- EU FP7 project, MORDRED (EU Project) [261868]
- EPSRC [EP/L000202/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/L000202/1, 1523980, 974599] Funding Source: researchfish
Ask authors/readers for more resources
We used ab initio calculations to investigate the hole trapping reactions at a neutral defect generated in amorphous silicon dioxide networks by the interaction of strained Si-O bonds with atomic hydrogen, a so-called hydroxyl E' center. It was found that the hole trapping at this defect leads to two distinct charged configurations. The first one consists of an H atom bound to a bridging O in a hydronium-like configuration. The second configuration involves relaxation of a Si atom through the plane of its oxygen neighbors facilitated by a weak interaction with a 2-coordinated O atom. The distribution of total energy differences between these two configurations calculated for a number of amorphous network models has a width of about 1.0 eV. These hole trapping reactions are discussed in the context of Si complementary metal-oxide-semiconductor device reliability issues. (C) 2015 Elsevier B.V. All rights reserved.
Authors
I am an author on this paper
Click your name to claim this paper and add it to your profile.
Reviews
Recommended
No Data Available