Journal
MICROELECTRONIC ENGINEERING
Volume 147, Issue -, Pages 104-107Publisher
ELSEVIER
DOI: 10.1016/j.mee.2015.04.043
Keywords
RRAM; Hafnium oxide; Aluminum; Doping; Retention
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Funding
- Fondazione Cariplo (MORE Project) [2009-2711]
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The retention behavior of HfO2-based resistive switching memory cells (REAM) is characterized as a function of Al doping concentration, which was previously reported to be a viable method for the improvement of the switching uniformity. While the low resistance state (LRS) does not exhibit any major variation up to 10(6) s for all the tested devices, two retention loss mechanisms can be identified for the high resistance state (HRS). The main HRS trend follows a temperature-activated gradual decrease of the resistance, which also depends on the doping concentration. In addition, tail bits of the population distribution show a very fast retention loss process that strongly depends on the doping concentration. (C) 2015 Elsevier B.V. All rights reserved.
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