Electrical and optical properties of TiN thin films

TiN thin films have been grown by reactive magnetron sputtering. It has been shown that an Ohmic contact to TiN thin-film can be made from indium. The TiN thin films have been shown to be n-type semiconductors with a carrier concentration of 2.88 x 10(22) cm(-3) and resistivity of rho = 0.4 Omega cm at room temperature. The activation energy for conduction in the TiN films at temperatures in the range 295 K < T < 420 K is 0.15 eV. The optical properties of the TiN thin films have been investigated. The material of the TiN thin films has been shown to be a direct gap semiconductor with a band gap E (g) = 3.4 eV.