Journal
INFRARED PHYSICS & TECHNOLOGY
Volume 61, Issue -, Pages 37-41Publisher
ELSEVIER
DOI: 10.1016/j.infrared.2013.07.003
Keywords
Vanadium dioxide films; FTO substrate; IR transmittance
Categories
Funding
- Key Program of Science and Technology Research of Shanghai Education Commission [10ZZ94]
- Innovation Fund Project for Graduate Student of Shanghai [JWCXSL1101]
- Shanghai Leading Academic Discipline Project [S30502]
- State Key Laboratory of Advanced Optical Communication Systems and Networks
- Shanghai Talent Leading Plan [016]
- Innovation Program of Shanghai Municipal Education Commission [12YZ094]
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By deposition of metallic vanadium on FTO substrate in Argon atmosphere at room temperature, the sample was then annealed in furnace for 2 h at the temperature of 410 degrees C in air ambient. (1 1 0) -orientated vanadium dioxide films were prepared on the FTO surface. A maximum transmittance of similar to 40% happened at 900-1250 nm region at room temperature. The change of optical transmittance at this region was similar to 25% between semiconducting and metallic states. In particular, vanadium dioxide thin films on FTO exhibit semiconductor-metal phase transition at similar to 51 degrees C, the width of the hysteresis loop is similar to 8 degrees C. (C) 2013 Elsevier B.V. All rights reserved.
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