Journal
INFRARED PHYSICS & TECHNOLOGY
Volume 55, Issue 1, Pages 156-160Publisher
ELSEVIER
DOI: 10.1016/j.infrared.2011.11.003
Keywords
Infrared photoluminescence; Bismuth compounds; Liquid phase epitaxy; Crystallites; Characterization; Solubility
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Funding
- Centre for Research in Nanoscience and Nanotechnology of the same University
- Department of Information Technology, Government of India
- University of Calcutta
- UK research council (EPSRC)
- EPSRC [EP/G000190/1] Funding Source: UKRI
- Engineering and Physical Sciences Research Council [EP/G000190/1] Funding Source: researchfish
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We report the first observation of photoluminescence (PL) from the dilute bismide alloy GaSbBi. Epitaxial layers are grown by liquid phase epitaxy technique onto GaSb (1 00) substrates and PL is obtained in the near infrared spectral range (lambda similar to 1.6 mu m). Incorporation of 0.2, 0.3 and 0.4 at% Bi to the layer results in a decrease of band gap energy up to 40 meV as well as an increase of luminescence from the sample. Structural analysis confirms the successful incorporation of Bi consistent with an increase in lattice parameter. Raman spectroscopy measurements indicate vibrational modes due to GaBi as well as to free Bi atoms residing at interstitial spaces. (C) 2011 Elsevier B.V. All rights reserved.
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