4.6 Article

Construction of Highly Luminescent CdTe/CdS@ZnS-SiO2 Quantum Dots as Conversion Materials toward Excellent Color-Rendering White-Light-Emitting Diodes

Journal

INDUSTRIAL & ENGINEERING CHEMISTRY RESEARCH
Volume 53, Issue 43, Pages 16763-16770

Publisher

AMER CHEMICAL SOC
DOI: 10.1021/ie502432y

Keywords

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Funding

  1. National High Technology Research and Development Program of China (863 Program) [2012AA030313]
  2. National Natural Science Foundation of China [21474052]
  3. Industrial Project in the Science and Technology Pillar Program of Jiangsu Province [BE2012181]
  4. Priority Academic Program Development of Jiangsu Higher Education Institutions
  5. Qing Lan Project

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Highly red-luminescent N-acetyl-l-cysteine-stabilized CdTe/CdS@ZnSSiO2 quantum dots (QDs) were successfully synthesized in the aqueous phase via a promising microwave strategy for the first time; they were prepared by coating SiO2 layers doped with ZnS-like clusters on CdTe/CdS core/shell QDs. Owing to the effective passivation of the coating CdS shell and ZnSSiO2 layer, the as-prepared QDs show high photoluminescence, good optical stability, and low biotoxicity. Moreover, the outermost SiO2 layer endows the QDs with excellent silicone compatibility. The structures and photoluminescence properties of the CdTe/CdS@ZnSSiO2 QDs were well studied by various characterizations. For their practical applications, we explored the promising red-luminescent QDs as novel red phosphors to fabricate two types of white-light-emitting diodes (WLEDs), a low-power surface-mounted device and a high-power device. Both of the devices produce bright white light with remarkable color rendering. Especially, the color-rendering index (CRI) of the high-power device even reaches up to 91.9, suggesting the great potential of the highly red-luminescent QDs for solid-state lighting systems with high CRI.

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