4.3 Article Proceedings Paper

Spin-Transfer Torque Switching at Ultra Low Current Densities

Journal

MATERIALS TRANSACTIONS
Volume 56, Issue 9, Pages 1323-1326

Publisher

JAPAN INST METALS
DOI: 10.2320/matertrans.MA201570

Keywords

spintransport; spin-transfer torque; current induced switching; magnetic tunnel junctions; perpendicular anisotropy; Neel-Brown law

Funding

  1. German Research Foundation (DFG) through Spin Caloric Transport [SPP 1538]
  2. Ministry of Innovation, Science and Research (MIWF) of North Rhine-Westphalia
  3. DFG [RE1052/22-1]
  4. [CRC 1073]

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The influence of the tantalum buffer layer on the magnetic anisotropy of perpendicular Co-Fe-B/MgO based magnetic tunnel junctions is studied using magneto-optical Kerr-spectroscopy. Samples without a tantalum buffer are found to exhibit no perpendicular magnetization. The transport of boron into the tantalum buffer is considered to play an important role on the switching currents of those devices. With the optimized layer stack of a perpendicular tunnel junction, a minimal critical switching current density of only 9.3 kA/cm(2) is observed and the thermally activated switching probability distribution is discussed.

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