4.8 Article

Contact engineering in organic field-effect transistors

Journal

MATERIALS TODAY
Volume 18, Issue 2, Pages 79-96

Publisher

ELSEVIER SCI LTD
DOI: 10.1016/j.mattod.2014.08.037

Keywords

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Funding

  1. National Research Foundation of Korea (NRF) grant - Korean Government (MSIP) [NRF-2014R1A2A2A01007159]
  2. Center for Advanced Soft-Electronics - Ministry of Science, ICT & Future Planning [2013M3A6A5073183]
  3. Dongguk University Research Fund
  4. National Research Foundation of Korea [2014R1A2A2A01007159, 2013M3A6A5073183] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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Organic field-effect transistors (OFETs) are promising for numerous potential applications but suffer from poor charge injection, such that their performance is severely limited. Recent efforts in lowering contact resistance have led to significantly improved field-effect mobility of OFETs, up to 100 times higher, as the results of careful choice of contact materials and/or chemical treatment of contact electrodes. Here we review the innovative developments of contact engineering and focus on the mechanisms behind them. Further improvement toward Ohmic contact can be expected along with the rapid advance in material research, which will also benefit other organic and electronic devices.

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