Journal
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
Volume 39, Issue -, Pages 112-118Publisher
ELSEVIER SCI LTD
DOI: 10.1016/j.mssp.2015.04.031
Keywords
Richardson constant; High energy electron irradiation; Silicon carbide; Schottky barrier height
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Funding
- National Research Foundation (NRF) of South African [(UID) 78838]
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The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on ntype Ni/4H-SiC samples of doping density 7.1 x 10(15) cm(-3) has been investigated over the temperature range 40-300 K. Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6 x 10(14) electrons-cm(-2). For both devices, the I-V characteristics were well described by thermionic emission (TE) in the temperature range 120-300K, but deviated from TE theory at temperature below 120 K. The current flowing through the interface at a bias of 2.0 V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8 x 10(15) to 6.8 x 10(15) cm(-3) after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163 A cm(-2) K-2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71 eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area. (C) 2015 Elsevier Ltd. All rights reserved.
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